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TriQuint Semiconductor Inc.
TriQuint Semiconductor Inc.
10/28/2012 | Press release
TriQuint's New GaN Transistors Deliver Superior Gain, Can Reduce Aplifier Size 50%
distributed by noodls on 10/28/2012 11:18
TriQuint's New GaN Transistors Deliver Superior Gain, Can Reduce Aplifier Size 50%
Meet TriQuint at EuMW in Amsterdam, October 29-31, Booth 311
Amsterdam, The Netherlands and Hillsboro, Oregon (USA) - October 28, 2012 - TriQuint Semiconductor Inc. (NASDAQ: TQNT), a leading RF products manufacturer and foundry services provider, is introducing four new rugged GaN HEMT RF power transistors that offer superior gain and efficiency. TriQuint's GaN transistors can cut the size of amplifier line-ups in half while improving efficiency and gain.
TriQuint's new GaN transistors deliver RF output power from 30-37W (CW) over operating frequencies as broad as DC to 6 GHz. They are excellent choices for applications ranging from commercial and defense radar to communications, test equipment, electronic warfare and similar broadband systems.
TriQuint's new GaN power transistors include the 28V T1G6003028-FS that operates from DC to 6 GHz and delivers 30W output power with efficiency of 55% at 3.5GHz and 44% at 6GHz. The T1G6003028-FL delivers the same performance and is offered in a flanged package to satisfy these assembly requirements. TriQuint's new 32V T1G4003532-FS and the flanged-package T1G4003532-FL are ideal for S-band radar and similar applications. They deliver 37W (CW) output power from DC to 3.5 GHz. Both devices provide more than 16dB of gain at 3.5 GHz and 10dB of gain at 6 GHz; their power-added efficiency is 60% at 5 GHz and 49.6% at 6 GHz.
All four new GaN transistors can withstand output impedance (VSWR) mismatches up to 10:1 without functional damage and are optimized for operation at high drain bias conditions, reducing system cost and thermal management overhead. All devices are exportable to most countries; check with TriQuint for details.
TriQuint's latest GaN transistors are being released at European Microwave Week (EuMW) in Amsterdam. Visit TriQuint in Booth 311 or request a meeting with our representatives to review benefits of GaN transistor technology and your design requirements. TriQuint is also introducing four new SAW diplexers for GPS applications that reduce package size nearly 3 times compared to ceramic filters, and four packaged GaAs pHEMT RF power amplifier modules designed around the latest manufacturing requirements including multi-layer PCB designs.
In addition to introducing 12 new products at EuMW 2012, TriQuint will present new radar and sensing technology solutions in the European-focused 'Defence, Security and Space Forum.' The Forum will be held on October 31 in the main auditorium of the RAI Center starting at 8:30 AM (CET). The presentation is a special track within EuMW and focuses on new GaN products and integrated assemblies. Admission is free.
| Technical Specifications - New TriQuint GaN Transistors: |
| T1G6003028-FS | DC-6 GHz GaN RF power transistor: 30W; 14dB gain at 3.5GHz; 10dB gain at 6 GHz; drain efficiency: 55% at 3.5 GHz / 44% at 6 GHz; 28V at 200 mA, withstands 10:1 VSWR, EAR99 flangeless package. |
| T1G6003028-FL | DC-6 GHz GaN RF power transistor: 30W; 14dB gain at 3.5GHz; 10dB gain at 6 GHz; drain efficiency: 55% at 3.5 GHz / 44% at 6 GHz; 28V at 200 mA, withstands 10:1 VSWR, EAR99 flanged package. |
| T1G4003532-FS | DC-3.5 GHz GaN RF power transistor: 37W CW; more than 16dB gain at 3.5 GHz; 10dB gain at 6 GHz; power-added efficiency: 60% at 5 GHz / 49.6% at 6 GHz; 32V at 2.4A; withstands 10:1 VSWR; EAR99 flangeless package. |
| T1G4003532-FL | DC-3.5 GHz GaN RF power transistor: 37W CW, more than 16dB gain at 3.5 GHz; 10dB gain at 6GHz; power-added efficiency: 60% at 5 GHz / 49.6% at 6 GHz; 32V at 2.4A; withstands 10:1 VSWR; EAR99; flange mount package. |
Contact product marketing for samples and evaluation boards. Visit TriQuint on the web, or contact Sales for a representative in your area, or register for our newsletter and product updates.
FORWARD LOOKING STATEMENTS
This TriQuint Semiconductor, Inc. (NASDAQ: TQNT) press
release contains forward-looking statements made pursuant
to the Safe Harbor provisions of the Private Securities
Litigation Reform Act of 1995. Readers are cautioned that
forward-looking statements involve risks and uncertainties.
The cautionary statements made in this press release should
be read as being applicable to all related statements
wherever they appear. Statements containing such words as
'leading', 'exceptional', 'high efficiency', 'key role',
'leading supplier', or similar terms are considered to
contain uncertainty and are forward-looking statements. A
number of factors affect TriQuint's operating results and
could cause its actual future results to differ materially
from any results indicated in this press release or in any
other forward-looking statements made by, or on behalf of,
TriQuint including, but not limited to: those associated
with the unpredictability and volatility of customer
acceptance of and demand for our products and technologies,
the ability of our production facilities and those of our
vendors to meet demand, the ability of our production
facilities and those of our vendors to produce products
with yields sufficient to maintain profitability, as well
as the other "Risk Factors" set forth in TriQuint's most
recent 10-Q report filed with the Securities and Exchange
Commission. This and other reports can be found on the SEC
web site, www.sec.gov. A
reader of this release should understand that these and
other risks could cause actual results to differ materially
from expectations expressed / implied in forward-looking
statements.
FACTS ABOUT TRIQUINT
Founded in 1985, TriQuint Semiconductor (NASDAQ: TQNT) is a
leading global provider of innovative RF solutions and
foundry services for the world's top communications,
defense and aerospace companies. People and organizations
around the world need real-time, all-the-time connections;
TriQuint products help reduce the cost and increase the
performance of connected mobile devices and the networks
that deliver critical voice, data and video communications.
With the industry's broadest technology portfolio,
recognized R&D leadership, and expertise in high-volume
manufacturing, TriQuint creates standard and custom
products using gallium arsenide (GaAs), gallium nitride
(GaN), surface acoustic wave (SAW) and bulk acoustic wave
(BAW) technologies. The company has ISO9001-certified
manufacturing facilities in the U.S., production in Costa
Rica, and design centers in North America and Germany. For
more information, visit www.triquint.com.
TriQuint: Connecting the Digital World to the Global Network®
GaN Product Marketing: Richard Martin
Product Marketing Manager
TriQuint Semiconductor, Inc
Tel: +1 972 994 8222
E-mail: richard.martin@tqs.com
Media Contact: Mark W. Andrews
Strategic MarCom Manager
TriQuint Semiconductor, Inc
Tel: +1 407 884 3404
Mobile: +1 407 353 8727
E-mail: mark.andrews@tqs.com
